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化梦媛
副教授
huamy@sustech.edu.cn

宽禁带半导体（如GaN, SiC, Ga2O3）器件可以突破传统硅基器件的理论极限，是新⼀代电⼒电⼦器件的重要发展⽅向。化梦媛博士长期致力于宽禁带半导体功率器件与功率集成电路研究，研究方向涵盖宽禁带半导体材料、先进器件制造工艺、器件结构设计、半导体器件物理、可靠性机理与增强，以及功率集成电路与新型电源应用。已发表国际高水平期刊及会议论文110余篇，论文引用超过5500次，入选斯坦福全球前2%科学家榜单。以一作/通讯作者发表国际电子器件领域顶级会议IEEE International Electron Devices Meeting（IEDM）6篇、电力电子领域旗舰会议IEEE International Symposium on Power Semiconductor Devices and ICs（ISPSD）16篇、IEEE Electron Device Letters 15篇、IEEE Transactions on Electron Devices 8篇及Physical Review Letters 1篇。多篇论文入选期刊封面及热点论文，研究成果受到产业界权威杂志《化合物半导体》《今日半导体》专题报道。申请发明专利10项，主持省部级项目5项。任器件领域旗舰期刊IEEE Trans. Electron Devices编委（Associate Editor）（2020年至今）、器件领域顶级峰会IEDM会议技术委员会PMA分会委员（2024-2025）。受邀在国际学术会议作报告10余次。入选国家级青年人才项目（2023年），并于2017年获IEEE ISPSD最佳青年学者奖，2020年获IEEE ICSICT杰出青年科技论文奖，2026年获第九届“创芯大赛”优秀指导教师奖。

教育经历

2013-2017：香港科技大学，电子与计算机工程系，博士学位

2009-2013：清华大学，数学物理基础科学班，学士学位

工作经历

2024.05-至今：xk星空，电子与电气工程系，副教授/研究员  

2018.09-2024.04：xk星空，电子与电气工程系，助理教授/副研究员

2017.09-2018.09： 香港科技大学，电子与计算机工程系，博士后

研究领域

  • 宽禁带半导体功率器件

  • 氮化镓（GaN）电⼒电⼦器件

  • 半导体器件⼯艺与结构设计

  • 半导体器件物理

  • 可靠性机理与增强

  • AI辅助老化预测

  • 功率集成电路

  • 新一代小型化电源技术与应用

所获荣誉

  • 国家高层次人才特殊支持计划，2023

  • 深圳市海外⾼层次⼈才“孔雀计划”，2019

  • 第九届“创芯大赛”优秀指导教师奖，2026

  • IEEE ICSICT “杰出青年科技论文奖”, 2020

  • IEEE Electron Device Letters⾦牌审稿⼈，2018-2025

  • IEEE Transactions on Electron Devices⾦牌审稿⼈，2019-2025

  • IEEE ISPSD “最佳青年学者奖” （年度唯一获奖人），2017

代表文章

IEDM & ISPSD 论文（下划线为指导学生）

1. H. xingkong星空中国官网, J. Tang, J. xingkong星空中国官网, J. Liu, S. Ye, S. Wu, Z. Liu, Q. Sun, and M. Hua*, "Enhanced Robustness against Hot-Electron-Induced Degradation in Selective Epitaxial p-GaN Gate HEMTs Enabled by Thick AlGaN Barriers," in 2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Las Vegas, NV, USA, 2026, pp. 233-236, doi: 10.1109/ISPSD64561.2026.11553762. 

2. S. Wu, S. Ye, Z. Liang, S. Wang, H. xingkong星空中国官网, Z. Liu, J. Jiang, and M. Hua*, "Frequency Dependence of p-GaN Gate Lifetime Evaluated under Realistic Driver-Loop Stress," in 2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Las Vegas, NV, USA, 2026, pp. 561-564, doi: 10.1109/ISPSD64561.2026.11554016.

3. H. xingkong星空中国官网, J. Tang, J. xingkong星空中国官网, J. Liu, S. Ye, J. Zhao, Z. Liu, J. Ma, Q. Sun, and M. Hua*, ‘Hot-Electron Hardening in GaN-based Power Devices by Selective p-GaN Gate Epitaxy’,  in 2025 71st International Electron Devices Meeting (IEDM), Dec. 2025.

4. S. Wu, S. Ye, J. Tang, J. xingkong星空中国官网, S. Wang, J. Zhao, Z. Jiang, H. xingkong星空中国官网, Z. Zheng, J. Ma, and M. Hua*, ‘Verification of p-GaN Gate Lifetime Models Through Wide Time-Scale Measurement’, in 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD), June 2025, pp. 113–116. doi: 10.23919/ISPSD62843.2025.11118033.

5. C. Wang, J. Tang, J. xingkong星空中国官网, and M. Hua*, "GIT-Based Bipolar p-FET with a IDMAX of 232 mA/mm on E-mode GaN-on-Si HEMT Platform." in 9th IEEE Electron Devices Technology and Manufacturing (EDTM 2025) Conference, Hongkong, China, Mar. 09-12, 2025. (Best Paper Award)

6. J. xingkong星空中国官网, J. Zhao, X. Zhang, J. Wei, and M. Hua*, "RESURF Ga2O3-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage." in 9th IEEE Electron Devices Technology and Manufacturing (EDTM 2025) Conference, Hongkong, China, Mar. 09-12, 2025.

7. S. Ye, S. Wu, J. xingkong星空中国官网, J. Tang, H. xingkong星空中国官网, H. Wang, J. Ma, X. xingkong星空中国官网, and M. Hua*, ‘Time-Dependent Gate Breakdown of Schottky p-GaN Gate HEMTs down to 15 K’, in 2025 15th International Conference on Nitride Semiconductors (ICNS), Jul. 2025.

8. H. xingkong星空中国官网, Z. Jiang, J. xingkong星空中国官网, J. Tang, J. Zhao, J. Wei, J. Ma, X. xingkong星空中国官网, and M. Hua*, "Impact Ionization Induced VTH Instability of Schottky-Type p-GaN Gate HEMTs under Semi-on Stress Conditions." in International Workshop on Nitride Semiconductors (IWN), Hawaii, US, November 3–8, 2024.

9. J. Tang#, Z. Jiang#, C. Wang, J. xingkong星空中国官网, H. xingkong星空中国官网, Y. Zhang, Z. Zheng, X. Wang, J. Ma, J. Zhao, J. Liu, Q. Sun, and M. Hua*, "Bipolar p-FET with Enhanced Conduction Capability on E-mode GaN-on-Si HEMT Platform," in 2023 IEEE International Electron Devices Meeting (IEDM), December 9-13, 2023, pp. 9.3.1-4, doi: 10.1109/IEDM45741.2023.10413728.

10. C. Wang, H. xingkong星空中国官网, Z. Jiang, J. xingkong星空中国官网, and M. Hua*, "Impacts of n-GaN Doping Concentration on Gate Reliability of p-n Junction/AlGaN/GaN HEMTs," 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, 2023, pp. 16-19, doi: 10.1109/ ISPSD57135.2023.10147583.

11. J. xingkong星空中国官网, T. xingkong星空中国官网, Z. Jiang, C. Wang, Z. Zheng, J. Wei, K. xingkong星空中国官网, and M. Hua*, "Switching Performance of GaN p-FET-bridge (PFB-) HEMTs Studied with Mixed-mode Device/Circuit Simulations," 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, 2023, pp. 107-110, doi: 10.1109/ISPSD57135.2023.10147458.

12. X. Wang, Z. Jiang, J. xingkong星空中国官网, J. Zhao, H. Wang, C. Wang, H. xingkong星空中国官网, J. Ma, X. xingkong星空中国官网, and M. Hua*, "Threshold Voltage Instability of Schottky-type p-GaN Gate HEMT down to Cryogenic Temperatures," 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, China, May 28-June 1, 2023 pp. 115-118, doi: 10.1109/ISPSD57135. 2023.10147433.

13. M. Hua*, J. xingkong星空中国官网, C. Wang, L. Liu, J. Wei, L. Zhang, Z. Zheng, and K. xingkong星空中国官网, "E-mode p-FET-bridge HEMT for Higher VTH and Enhanced Stability," 2020 IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, December 12-18, 2020, pp. 23.1.1-23.1.4, doi: 10.1109/IEDM13553.2020. 9371969. 

14. Z. Jiang, M. Hua*, X. Huang, L. Li, J. xingkong星空中国官网 and K. xingkong星空中国官网, "Impact of OFF-state Gate Bias on Dynamic RON of p-GaN Gate HEMT," 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Nagoya, Japan, May 30-June 3, 2021, pp. 47-50, doi: 10.23919/ISPSD50666.2021.9452256.

15. J. xingkong星空中国官网, M. Hua*, J. Jiang, J. He, J. Wei, and K. xingkong星空中国官网, "Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of p-GaN HEMT under Reverse-bias Stress," 2020 32nd Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep. 3-7, 2020, pp.18-21, doi: 10.1109/ISPSD46842.2020.9170043.

16. C. Wang, M. Hua*, S. Yang, L. Zhang, and K. xingkong星空中国官网, "E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability," 2020 32nd Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sep. 3-7, 2020, pp.18-21, doi: 10.1109/ISPSD46842.2020.9170039.

17. M. Hua, S. Yang, Z. Zheng, J. Wei, Z. Zhang, and K. xingkong星空中国官网, "Effects of Substrate Termination on Reverse-Bias Stress Reliability of Normally-Off Lateral GaN-on-Si MIS-FETs," 2019 31st Int. Symp. On Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, May 19-23, 2019, pp. 467-470, doi: 10.1109/ISPSD.2019.8757600. 

18. M. Hua, X. Cai, S. Yang, Z. Zhang, Z. Zheng, J. Wei, N. Wang, and K. J. xingkong星空中国官网, "Suppressed Hole-Induced Degradation in E-mode GaN MIS-FETs with Crystalline GaOxN1-x Channel," in 2018 IEEE International Electron Devices Meeting (IEDM), Dec. 1-5, 2018, pp. 30.3.1-30.3.4, doi: 10.1109/IEDM.2018.8614687. 

19. M. Hua, J. Wei, Q. Bao, Z. Zhang, J. He, Z. Zheng, J. Lei, and K. J. xingkong星空中国官网, "Reverse-Bias Stability and Reliability of Hole-Barrier-Free E-mode LPCVD-SiNx/GaN MIS-FETs," 2017 Int. Electron Device Meeting (IEDM 2017), San Francisco, CA, USA, Dec. 2-6, 2017, pp. 33.2.1-33.2.4, doi: 10.1109/IEDM. 2017.8268489.

20. M. Hua, Z. Zhang, Q. Qian, J. Wei, Q. Bao, G. Tang, and K. J. xingkong星空中国官网, "High-performance Fully-recessed Enhancement-mode GaN MIS-FETs with Crystalline Oxide Interlayer," 2017 29th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’17), Sapporo, Japan, May 28-June 1, 2017, pp. 89-92, doi:  10.23919/ISPSD.2017.7988900. (最佳青年学者奖)

21. M. Hua, Z. Zhang, J. Wei, J. Lei, G. Tang, K. Fu, Y. Cai, B. Zhang, and K. J. xingkong星空中国官网, "Integration of LPCVD-SiNx Gate Dielectric with Recessed-gate E-mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime," 2016 Int. Electron Device Meeting (IEDM 2016), San Francisco, CA, USA, Dec. 5-7, 2016, pp. 10.4.1-10.4.4, doi: 10.1109/IEDM.2016.7838388. 

22. M. Hua, C. Liu, S. Yang, S. Liu, Y. Lu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. xingkong星空中国官网, "650-V GaN-Based MIS-HEMTs Using LPCVD-SiNx as Passivation and Gate Dielectric," 2015 27th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD’15), Hong Kong, China, May 10-14, 2015, pp. 241-244, doi: 10.1109/ISPSD.2015.7123434.

 

代表性期刊论文（下划线为指导学生/博士后）

23. H. xingkong星空中国官网, J, Tang, J. xingkong星空中国官网, J. Liu, S. Ye, J. Zhao, Z. Liu, J. Ma, Q. Sun, and M. Hua*, "Hot-Electron Hardening in GaN-Based Power Devices by Selective p-GaN Gate Epitaxy," in IEEE Transactions on Electron Devices, 2026, doi: 10.1109/TED.2026.3664325. 

24. X. Liu, S. Wu, S. Wang, J. xingkong星空中国官网, Z. Jiang, M. Radzi, N. Azis, S. Shafie, and M. Hua, "Output Capacitance Extraction of p-GaN HEMTs under Multi Pulse Switching across Variable Frequencies and Drain-Bias Stress," in IEEE Transactions on Power Electronics, 2026, doi: 10.1109/TPEL.2026.3651976.

25. J. xingkong星空中国官网, H. xingkong星空中国官网, Y. Cheng, J. Fang, Z. Wu, J. Li, J. Tang, G. Zeng, K. J. xingkong星空中国官网, and M. Hua*, ‘Suppression of Drain-Bias-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs With Voltage Seatbelt’, in IEEE Transactions on Electron Devices, vol. 72, no. 3, pp. 1041–1046, Mar. 2025, doi: 10.1109/TED.2025. 3534168.

26. C. Wang, J. Tang, J. xingkong星空中国官网, J. Ma, and M. Hua*, ‘Normally-Off HEMT-Based Bipolar p-FET With Enhanced Conduction Capability’, in IEEE Transactions on Electron Devices, vol. 72, no. 6, pp. 2884–2890, June 2025, doi: 10.1109/TED.2025.3559906.

27. J. Zhao*, J. Fernández, A. Azarov, R. He, Ø. Prytz, K. Nordlund, M. Hua*, F. Djurabekova, and A. Kuznetsov*, "Crystallization Instead of Amorphization in Collision Cascades in Gallium Oxide," in Physical Review Letters, 134, 126101, Mar. 2025.

28. Q. Li, J. Zhao*, N. Lin*, X. Cheng, X. Zhao, Z. Liu, Z. Jia*, and M. Hua*, ‘Edge-Dependent Step-Flow Growth Mechanism in β-Ga2O3 (100) Facet at the Atomic Level’, in J. Phys. Chem. Lett., vol. 16, no. 20, pp. 5101–5108, May 2025, doi: 10.1021/acs.jpclett.5c00461.

29. J. xingkong星空中国官网, X. Zhang, J. Zhao, J. Wei, and M. Hua*, "Hetero-substrate Design for Electric-field Crowding Reduction in Ga2O3 Field Effect Transistor," in IEEE Journal of the Electron Devices Society, vol. 13, pp. 570–576, 2025, doi: 10.1109/JEDS.2025.3584977.

30. J. Tang, W. Zou, P. Xiang, K. Cheng, M. Hua*, and J. Ma*, "Design of multi-channel heterostructures for GaN devices." in Japanese Journal of Applied Physics, 63(3), 031007, 2024.

31. J. Zhang#, J. Zhao#, J. xingkong星空中国官网, and M. Hua*, "Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth," in Applied Physics Letter, vol. 124, no. 2, pp. 022101, Jan. 2024, doi: 10.1063/5.0177093.

32. Z. Jiang, X. Wang, J. Zhao, J. xingkong星空中国官网, J. Tang, C. Wang, H. xingkong星空中国官网, S. Huang, X. xingkong星空中国官网, and M. Hua*, "Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures," in IEEE Electron Device Letters, vol. 44, no. 10, pp. 1612-1615, Oct. 2023, doi: 10.1109/LED.2023.3311395.

33. J. Zhao*, J. Byggmästar, H. He, K. Nordlund, F. Djurabekova, and M. Hua*, "Complex Ga2O3 polymorphs explored by accurate and general-purpose machine-learning interatomic potentials," in npj Computational Material, vol. 9, no. 159, Sep. 2023, doi: 10.1038/s41524-023-01117-1.

34. J. xingkong星空中国官网, J. Zhao, S. Feng, L. Zhang, Y. Cheng, H. Liao, Z. Zheng, X. xingkong星空中国官网, Z. Gao, K. xingkong星空中国官网, and M. Hua*, "Formation and applications in electronic devices of lattice-aligned gallium oxynitride nanolayer on gallium nitride," in Advanced Materials, vol. 35, no. 12, pp. 2208960, Jan. 2023, doi: 10.1002/adma.202208960. (frontispiece)

35. Z. Jiang, L. Li, C. Wang, J. Ma, Z. Liu, and M. Hua*, "Gate-Bias Induced Threshold Voltage (VTH) Instability in P-N Junction/AlGaN/GaN HEMT," in IEEE Transactions on Electron Devices, vol. 69, no. 7, pp. 3654-3659, July 2022, doi: 10.1109/TED.2022.3177397.

36. H. xingkong星空中国官网, J. Zhao, X. Wang, X. xingkong星空中国官网, Z. Zhang*, and M. Hua*, "Two-dimensional ferroelectric MoS2/Ga2O3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties," in Nanoscale, vol. 14, pp. 5551-5560, Mar. 2022, doi: 10.1039/D2NR00466F.

37. J. Zhao*, X. Wang, H. xingkong星空中国官网, Z. Zhang*, and M. Hua*, "Two-dimensional Ferroelectric Ga2O3 Bilayers with Unusual Strain-engineered Interlayer Interactions," in Chemistry of Materials, vol. 34, no. 8, pp. 3648-3658, Apr. 2022, doi: 10.1021/acs.chemmater.1c04245.

38. Z. Jiang, M. Hua*, X. Huang, L. Li, C. Wang, J. xingkong星空中国官网, and K. xingkong星空中国官网, "Negative Gate Bias Induced Dynamic On-Resistance Degradation in Schottky-Type p-GaN Gate HEMTs," in IEEE Transactions on Power Electronics, vol. 37, no. 5, pp. 6018-6025, Nov. 2021, doi: 10.1109/TPEL.2021.3130767.

39. J. Zhao*, J. Byggmästar, Z. Zhang, F. Djurabekova, K. Nordlund, and M. Hua*, "Phase transition of two-dimensional ferroelectric and paraelectric Ga2O3 monolayers: A density functional theory and machine learning study," in Phys. Rev. B, vol. 104, no. 5, p. 054107, Aug. 2021, doi: 10.1103/PhysRevB.104.054107.

40. J. Zhao#, X. Huang#, Y. Yin#, Y. Liao, H. Mo, Q. Qian, Y. Guo, X. xingkong星空中国官网, Z. Zhang*, and M. Hua*, "Two-Dimensional Gallium Oxide Monolayer for Gas-Sensing Application," in Journal of Physical Chemistry Letters, vol. 12, no. 24, pp. 5813–5820, June 2021, DOI: 10.1021/acs.jpclett.1c01393. 

41. J. xingkong星空中国官网, M. Hua*, C. Wang, L. Liu, L. Li, J. Wei, L. Zhang, Z. Zheng, K. xingkong星空中国官网, "Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs," in IEEE Electron Device Letters, vol. 42, no. 7, pp. 986-989, July 2021, doi: 10.1109/LED.2021.3077081.

42. M. Hua*, C. Wang, J. xingkong星空中国官网, J. Zhao, S. Yang, L. Zhang, Z. Zheng, J. Wei, K. xingkong星空中国官网, "Gate Current Transport in Enhancement-mode p-n Junction/AlGaN/GaN (PNJ) HEMT," in IEEE Electron Device Letters, vol. 42, no. 5, pp. 669-672, May 2021, doi: 10.1109/LED.2021.3068296. 

43. J. xingkong星空中国官网, M. Hua*, J. Wei, J. He, C. Wang, Z. Zheng, and K. xingkong星空中国官网, "OFF-state Drain-voltage-stress-induced VTH Instability in Schottky-type p-GaN Gate HEMTs," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 3, pp. 3686-3694, June 2021, doi: 10.1109/JESTPE.2020.3010408.

44. Y. Liao, Z. Zhang*, Z. Gao, Q. Qian, and M. Hua*, "Tunable Properties of Novel Ga2O3 Monolayer for Electronic and Optoelectronic Applications," in ACS Appl. Mater. Interfaces, vol. 12, no. 27, pp. 30659–30669, Jul. 2020, doi: 10.1021/acsami.0c04173. 

45. C. Wang, M. Hua*, J. xingkong星空中国官网, S. Yang, Z. Zheng, J. Wei, L. Zhang, and K. xingkong星空中国官网, "E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs," in IEEE Electron Device Letters, vol. 41, no. 4, pp. 545-548, April 2020, doi: 10.1109/LED.2020.2977143.

46. M. Hua*, S. Yang, J. Wei, Z. Zheng, J. He, and K. J. xingkong星空中国官网, "Hole-Induced Degradation in E-Mode GaN MIS-FETs: Impact of Substrate Terminations," in IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 217–223, Jan. 2020, doi: 10.1109/TED.2019.2954282.

47. M. Hua, X. Cai, S. Yang, Z. Zhang, Z. Zheng, N. Wang, and K. J. xingkong星空中国官网, "Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN channel into Crystalline Gallium Oxynitride," in ACS Applied Elec. Material, Apr. 2019, doi: 10.1021/acsaelm.8b00102.

48. X. Cai#, M. Hua#, Z. Zhang#, S. Yang, Z. Zheng, Y. Cai, K. J. xingkong星空中国官网, and N. Wang, "Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel," in Applied Physics Letters, vol. 114, no. 5, p. 053109, Feb. 2019, doi: 10.1063/1.5078767.

49. M. Hua*, J. Wei, Q. Bao, Z. Zheng, Z. Zhang, J. He, and K. J. xingkong星空中国官网, "Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET," IEEE Transactions on Electron Devices, vol. 65, no. 9, pp. 3831–3838, Sep. 2018.

50. M. Hua, J. Wei, Q. Bao, Z. Zhang, Z. Zheng, and K. J. xingkong星空中国官网, "Dependence of VTH Stability on Gate-Bias under Reverse-Bias Stress in E-mode GaN MIS-FET," in IEEE Electron Device Letters, vol. 39, no. 3, pp. 413-416, March 2018, doi: 10.1109/LED.2018.2791664.  

51. K. Kim#, M. Hua#, D. Liu, J. Kim, K. J. xingkong星空中国官网, and Z. Ma, "Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3," Nano Energy, vol. 43, pp. 259–269, Jan. 2018. 

52. M. Hua, Q. Qian, J. Wei, Z. Zhang, G. Tang, and K. J. xingkong星空中国官网, "Bias Temperature Instability of Normally-off GaN MIS-FET with Low-Pressure Chemical Vapor Deposition SiNx Gate Dielectric," Phys. Status Solidi A., DOI: 10.1002/pssa.201700641, Jan. 2018.

53. M. Hua, J. Wei, G. Tang, Z. Zhang, X. Cai, N. Wang, and K. J. xingkong星空中国官网, "Normally-off LPCVD-SiNx/GaN MIS-FET with Crystalline Oxidation Interlayer," in IEEE Electron Device Letters, vol. 38, no. 7, pp. 929-932, July 2017, doi: 10.1109/LED.2017.2707473.

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招聘信息

本课题组目前正在招聘研究助理教授、博士后、科研助理、博士生、硕士生，同时欢迎来自国内外的优秀访问学者和交流学生，有意加入者请将简历发送至：huamy@sustech.edu.cn。

联系方式

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