Dr. Qing xk星空官网 is a research professor and PhD supervisor of the School of Microelectronics, Southern University of Science and Technology (SUSTech). She is recognized as a Shenzhen High-Level Talent and serves as the Deputy Director of both the Guangdong GaN Device Engineering Technology Research Center and the Shenzhen Key Laboratory of Third-Generation Semiconductor Materials and Devices. She has published more than 90 high-level academic papers, such as IJEM, Advanced Science, Device, IEEE EDL, ISPSD, APL. She has authorized/applied for more than 50 domestic invention patents and 5 PCT patents. As an IEEE Senior Member, Dr. xk星空官网 plays an active role in the power electronics community. She serves on the IEEE Electron Devices Society (EDS) Power Devices and ICs Committee. Also, she contributes as a Guest Editor for special issues in IEEE Transactions on Electron Devices and Nanomaterials. Her primary research focuses on GaN power devices and RF devices, involving the comprehensive design and fabrication of GaN-based devices and systems for applications in 5G communications, AI power supplies, humanoid robots, new energy, and related fields.

Educational Background

2013. Ph.D. Department of Materials Science and Engineering, South China University of Technology

2008. B.A. Department of Materials Science and Engineering, Southwest University 

Professional Experiences

2023.8-Present，Research Professor, Southern University of Science and Technology

2019.4-2023.7，Research Associate Professor, Southern University of Science and Technology

2013.7-2019.1，Successively served as Divisional Manager, R&D manager, and Director of manufacturing department, Sino Nitride Semiconductor Ltd.

Research Interests

GaN Power Devices and ICs

GaN RF Devices and PA Modules

GaN Smart Sensing Systems 

Ga₂O₃ Devices and ICs

Honors & Awards

2023，Second Prize of Innovation Award of China Invention Association (ranked second)

2021，Distinctive Talent of Shenzhen City

2021，"Outstanding Communist Party Member", College of Engineering, Southern University of Science and Technology

2019，"Annual outstanding contribution award" of the third generation semiconductor industry technological innovation strategic alliance

Selected Publication：

1. Yi Zhang, Zilong Xiong, Lewei He, Yang Jiang, Chenkai Deng, Fangzhou Du, Kangyao Wen, Chuying Tang, Qiaoyu Hu, Mujun Li, Xiaohui xk星空官网, Wenhui xk星空官网, Han xk星空官网, Qing xk星空官网*, Hongyu Yu*, Zhongrui xk星空官网*. Electrically reconfigurable surface acoustic wave phase shifters based on ZnO TFTs on LiNbO3 substrate[J]. International Journal of Extreme Manufacturing, 2025, 7(3): 035504.

2. Honghao Lu, Chun Fu, Chuying Tang, Mujun Li, Wenchuan Tao, Fangzhou Du, Hongyu Yu,and Qing xk星空官网*. Low-Resistivity Ohmic Contact on p-GaN/AlGaN/GaN Enabled by Mg-Doped Spin-On-Glass Treatment[J]. IEEE Electron Device Letters, 2025.

3. ChuYing Tang, ChengKai Deng Yi Zhang, Yang Jiang, Chun Fu, Jiaqi He, Fangzhou Du, Peiran xk星空官网, Kangyao Wen, Nick Tao, Wenyue Yu, Qing xk星空官网*, and HongYu Yu*. Low Contact Resistivity of<10Ω·mm for Au-Free Ohmic Contact on p-GaN/AlGaN/GaN[J]. IEEE Electron Device Letters, 2024.

4. Fangzhou Du, Yang Jiang, Ziyang xk星空官网, Kangyao Wen, Mujun Li, Xiaohui xk星空官网, Yi Zhang, Chenkai Deng, Qing xk星空官网*, Hongyu Yu*. High-Performance InAlN/GaN HEMTs and Monolithically Integrated Inverters Enabled by InAlOxN1-x Plasma-Induced-Oxidation Charge Trapping Layer. 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2025. (Accepted)

5. Yang Jiang, Fangzhou Du, Ziyang xk星空官网, Kangyao Wen, Mujun Li, Yifan Cui, Han xk星空官网, Qing xk星空官网*, Hongyu Yu*. Dynamic Performance Analysis of GaN Digital Logic Gate Circuits for MHz-level Operation via CTL-based ICs Platform. 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2025. (Accepted)

6. Mujun Li, Xiaohui xk星空官网, Yang Jiang, Fangzhou Du, Haozhe Yu, Qing xk星空官网*, Hongyu Yu*. Monolithie Integrated-Ga2O3 Inverters Based on Charge Trapping Layer E-mode MOSFETS. 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2025. (Accepted)

7. Yang Jiang, Shuhui Shi, Shaocong xk星空官网, Fangzhou Du, Peiran xk星空官网, Ning Lin, Wennao Li, Yi Zhang, Leiwei He, Robert Sokolovskij, Jiaqi He, Mujun Li, Dingchen xk星空官网, Xi Chen, Qing xk星空官网*, Hongyu Yu*, and Zhongrui xk星空官网*. In-sensor Reservoir Computing for Gas Pattern Recognition using Pt-AlGaN/GaN HEMTs. Device (2024).

8. Yang Jiang, Fangzhou Du, Kangyao Wen, Jiaqi He, Mujun Li, Chuying Tang, Yi Zhang, Zhongrui xk星空官网*, Qing xk星空官网*, Hongyu Yu*. High V TH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer. 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2024.

9. Yang Jiang, FangZhou Du, KangYao Wen, JiaQi He, PeiRan xk星空官网, MuJun Li, ChuYing Tang, Yi Zhang, ZhongRui xk星空官网 *, Qing xk星空官网*, HongYu Yu*. Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters. Applied Physics Letters. 10 June 2024; 124 (24): 242102.

10. Yi Deng, Yi Zhang*, Xinyuan Zhang, Yang Jiang, Xi Chen, Yansong Yang, Xin Tong, Yao Cai, Wenjuan Liu, Chengliang Sun, Dashan Shang, Qing xk星空官网*, Hongyu Yu*, Zhongrui xk星空官网*. MEMS Oscillators-Network-Based Ising Machine with Grouping Method. Advanced Science. 2024, 2310096.

11. JiaQi He, PeiRan xk星空官网, FangZhou Du, KangYao Wen, Yang Jiang, ChuYing Tang, ChenKai Deng, MuJun Li, QiaoYu Hu, Nick Tao, Peng Xiang, Kai Cheng, Qing xk星空官网*, Gang Li, HongYu Yu*. Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench. Applied Physics Letters .25 March 2024; 124 (13): 132104.

12. Chuying Tang, Chun Fu, Yang Jiang, Minghao He, Chenkai Deng, Kangyao Wen, Jiaqi He, Peiran xk星空官网, Fangzhou Du, Yi Zhang, Qiaoyu Hu, Nick Tao, Qing xk星空官网*, HongYu Yu*. Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity. Applied Physics Letters. 28 August 2023; 123 (9): 092104.

13. Chu-Ying Tang, Hong-Hao Lu, Ze-Peng Qiao, Yang Jiang, Fang-Zhou Du, Jia-Qi He, Yu-Long Jiang*, Qing xk星空官网*, and Hong-Yu Yu*, Ohmic Contact with a Contact Resistivity of 12 Ω·mm on p-GaN/AlGaN/GaN, IEEE Electron Device Letters, 2022, 43(9): 1412–1415.

14. Yang Jiang, Dingchen xk星空官网, Ning Lin, Shuhui Shi, Yi Zhang, Shaocong xk星空官网, Xi Chen, Hegan Chen, Yinan Lin, Kam Chi Loong, Jia Chen, Yida Li, Renrui Fang, Dashan Shang*, Qing xk星空官网*, Hongyu Yu* and Zhongrui xk星空官网*. Spontaneous Threshold Lowering Neuron using Second-Order Diffusive Memristor for Self-Adaptive Spatial Attention, Advanced Science, 2023, 2301323.

15. Yang Jiang, Wenmao Li, Fangzhou Du, Robert Sokolovskij, Yi Zhang, Shuhui Shi, Weiguo Huang, Qing xk星空官网*, Hongyu Yu* and Zhongrui xk星空官网*. Comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses, Journal of Materials Chemistry C, 2023,11, 10121-10148

16. Chuying Tang, Chun Fu, Yang Jiang, Minghao He, Chenkai Deng, Kangyao Wen; Jiaqi He, Peiran xk星空官网, Fangzhou Du, Yi Zhang, Qiaoyu Hu, Nick Tao, Qing xk星空官网* and HongYu Yu*，" Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity". Applied Physics Letters， Vol.123, Issue 9, 092104 (2023). 

17. Jiaqi He, Kangyao Wen, Peiean xk星空官网, Minghao He, Fangzhou Du, Yang Jiang, Chuying Tang, Nick Tao, Qing xk星空官网*, Gang Li*, and Hongyu Yu*, Interface charge engineering on an in-situ SiNx/AlGaN/GaN platform for normally-off GaN MIS-HEMTs with improved breakdown performance, Applied Physics Letters (2023), 4 September 2023; 123 (10): 103502.

18. Minghao He, Kangyao Wen, Chenkai Deng, Mujun Li, Yifan Cui, Qing xk星空官网*, Hongyu Yu*, Kah-Wee Ang*, "Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET," in IEEE Transactions on Electron Devices, vol. 70, no. 6, pp. 3191-3195, June 2023.

19. Chenkai Deng, Wei-Chih Cheng, XiGuang Chen, KangYao Wen, MingHao He, ChuYing Tang, Peiran xk星空官网, Qing xk星空官网*, HongYu Yu*; Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation. Applied Physics Letters. 5 June 2023; 122 (23): 232107.

20. Yang Jiang, FangZhou Du, JiaQi He, ZePeng Qiao, ChuYing Tang, XinYi Tang, ZhongRui xk星空官网, Qing xk星空官网*, HongYu Yu*，"Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance". Applied Physics Letters. 121, 212105 (2022).

English Book：

1. xk星空官网 Qing, Yu Gang, xk星空官网 Jian, Organic Light-Emitting Materials and Devices (Chapter 1), CRC Press, ISBN-13: 978-1-4398-8223-8, 2015.